Aluminum Nitride Substrate Growth by Halide Vapor Transport Epitaxy
نویسندگان
چکیده
High-quality AlN layers with thickness up to 50 mm have been grown by HVTE at growth rates up to 60mm/h at deposition temperatures of 1000–11001C in the pressure range of 50–760Torr. The HVT process uses an aluminum chloride amine adduct as the aluminum source and ammonia for the nitrogen. This new technique eliminates the main difficulties of the conventional HVPE growth, where aluminum oxidation and the strong reactivity of aluminum chloride with quartz create the potential for oxygen contamination. The crystalline layer quality as determined by X-ray rocking curve measurement shows FWHM of 300–900 and 500–1300 arcsec for (0 0 2) and (1 0 2) planes, respectively. r 2002 Elsevier Science B.V. All rights reserved. PACS: 81.05.Ea; 81.15.Kk; 68.55.Jk
منابع مشابه
High-quality AlN films grown on chemical vapor-deposited graphene films
We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented ...
متن کاملEnvironmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy
Aluminum nitride (AlN) has attracted increasing interest as an optoelectronic material in the deep ultraviolet spectral range due to its wide bandgap of 6.0 eV (207 nm wavelength) at room temperature. Because AlN bulk single crystals are ideal device substrates for such applications, the crystal growth of bulky AlN has been extensively studied. Two growth methods seem especially promising: hydr...
متن کاملReduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth p...
متن کاملStatus of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues ...
متن کاملCubic GaN Light Emitting Diode Grown by Metalorganic Vapor-Phase Epitaxy
Manuscript received September 27, 1999. Manuscript revised October 20, 1999. † The authors are with NTT Cyber Space Laboratories, Musashino-shi, 180-8585 Japan. a) E-mail: [email protected] SUMMARY We studied Si and Mg doping characteristics in cubic GaN and fabricated a light emitting diode of cubic GaN on a GaAs substrate by metalorganic vapor-phase epitaxy. The diode structure con...
متن کامل